The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Aug. 09, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Yu Hsu, Hsinchu County, TW;
Jian-Hao Chen, Hsinchu, TW;
Chia-Wei Chen, Hsinchu, TW;
Shan-Mei Liao, Hsinchu, TW;
Hui-Chi Chen, Hsinchu County, TW;
Yu-Chia Liang, Hsinchu, TW;
Shih-Hao Lin, Hsinchu, TW;
Kuei-Lun Lin, Hsinchu, TW;
Kuo-Feng Yu, Hsinchu, TW;
Feng-Cheng Yang, Hsinchu County, TW;
Yen-Ming Chen, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.