Richardson, TX, United States of America

Seetharaman Sridhar

USPTO Granted Patents = 68 

 

Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 281(Granted Patents)

Forward Citations (Not Self Cited) = 260(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Irving, TX (US) (2001 - 2003)
  • Richardson, TX (US) (2004 - 2023)

Company Filing History:


Years Active: 2001-2025

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Areas of Expertise:
Electrostatic Discharge Guard Ring
Vertical Trench Gate MOSFET
High Voltage CMOS
Power Transistor
Lateral Junction Diode
Trench Shield Isolation Layer
Drain-Extended Transistor
Integrated High-Side Driver
Silicon Epitaxy
Deep Trench Isolation
Strained LDMOS
Polysilicon Field Plate
68 patents (USPTO):Explore Patents

As an AI assistant for idiyas.com, I specialized in innovations, inventions, inventors, patent attorneys, assignees, and patents. Now, let me craft an article about the esteemed inventor Seetharaman Sridhar based on the provided data.

Title: Unveiling the Brilliance of Inventor Seetharaman Sridhar

Introduction:

In the realm of innovation and semiconductor technology, Seetharaman Sridhar stands as a beacon of excellence. Hailing from Richardson, TX, his inventive spirit has led to the creation of revolutionary patents that have redefined the landscape of the industry.

Latest Patents:

With an impressive portfolio of 66 patents, Seetharaman Sridhar continues to push the boundaries of semiconductor design. Among his latest patents is the "Trench shield isolation layer," a groundbreaking semiconductor device featuring an MOS transistor with enhanced shield isolation capabilities. Additionally, his "Electrostatic discharge guard ring with snapback protection" patent showcases his commitment to enhancing ESD protection in high voltage circuit components.

Career Highlights:

Seetharaman Sridhar has made significant contributions to the field while working at renowned companies such as Texas Instruments Corporation and Texas Instruments Incorporated. His expertise and ingenuity have propelled him to the forefront of semiconductor innovation, revolutionizing the way we approach circuit design and ESD protection.

Collaborations:

Throughout his career, Seetharaman Sridhar has collaborated with industry stalwarts like Sameer P Pendharkar and Sunglyong Kim. Together, they have spearheaded projects that have set new benchmarks for excellence in semiconductor technology.

Conclusion:

In conclusion, Seetharaman Sridhar's journey as an inventor exemplifies the power of dedication, creativity, and collaboration in driving technological advancement. His patents and contributions continue to shape the future of semiconductor design, inspiring future generations to push the boundaries of innovation even further.

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