The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Feb. 11, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Sunglyong Kim, Allen, TX (US);

Seetharaman Sridhar, Richardson, TX (US);

Sameer Pendharkar, Allen, TX (US);

David LaFonteese, Redwood City, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H02H 9/04 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 27/0255 (2013.01); H01L 27/0262 (2013.01); H01L 27/0266 (2013.01); H01L 27/027 (2013.01); H01L 27/0285 (2013.01); H01L 29/063 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/7835 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/42368 (2013.01); H02H 9/044 (2013.01); H02H 9/046 (2013.01); H03K 19/018507 (2013.01);
Abstract

An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection structure includes a p-channel device and an n-channel device. The p-channel device includes an n-type barrier region circumscribing a p-type drain region with an n-type body region. The p-channel device may be positioned adjacent to the n-channel device and a high voltage junction diode.


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