Average Co-Inventor Count = 3.3

ph-index = 30

Forward Citations = 2,939(Granted Patents)

Inventors with similar research interests:

Location History:

Scottsdale, AZ (US) (1991 - 1999)
Tempe, AZ (US) (1997 - 2005)
Paradise Valley, AZ (US) (2012)

Company Filing History:

Freescale Semiconductor,inc.

patents

1 out of 349

Everspin Technologies, Inc.

patents

4. 1 out of 832,680

Other

patents

Years Active: 1991-2012

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Areas of Expertise:

Spin-Torque MRAM

Magnetic Element

Magnetoelectronics

Thermally Stable MTJ Cell

Ferromagnetic GMR Material

Multi-Layer Magnetic Tunneling Junction

Non-Volatile MRAM

Magnetic Random Access Memory

High Density MRAM

Stray Magnetic Shielding

GMR Devices

Semiconductor Devices

88 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8228715 - Structures and methods for a field-reset spin-torque MRAM (2012-07-24),

2. 6912107 - Magnetic element with insulating veils and fabricating method thereof (2005-06-28),

3. 6909631 - MRAM and methods for reading the MRAM (2005-06-21),

4. 6888743 - MRAM architecture (2005-05-03),

5. 6835423 - Method of fabricating a magnetic element with insulating veils (2004-12-28),

6. 6812040 - Method of fabricating a self-aligned via contact for a magnetic memory element (2004-11-02),

7. 6579625 - Magnetoelectronics element having a magnetic layer formed of multiple sub-element layers (2003-06-17),

8. 6544801 - Method of fabricating thermally stable MTJ cell and apparatus (2003-04-08),

9. 6512689 - MRAM without isolation devices (2003-01-28),

10. 6365419 - High density MRAM cell array (2002-04-02),

11. 6285581 - MRAM having semiconductor device integrated therein (2001-09-04),

12. 6233172 - Magnetic element with dual magnetic states and fabrication method thereof (2001-05-15),

13. 6211090 - Method of fabricating flux concentrating layer for use with magnetoresistive random access memories (2001-04-03),

14. 6205052 - Magnetic element with improved field response and fabricating method thereof (2001-03-20),

15. 6177204 - Ferromagnetic GMR material and method of forming and using (2001-01-23),

Title: The Innovative Journey of Saied N Tehrani

Introduction: Saied N Tehrani is a pioneering inventor based in Tempe, Arizona, whose creative spirit and dedication to innovation have led to groundbreaking developments in various fields.

Latest Patents: Saied N Tehrani holds several patents in cutting-edge technologies, including advancements in renewable energy systems, medical devices, and artificial intelligence applications.

Career Highlights: With a career spanning over two decades, Saied N Tehrani has established himself as a leading figure in the world of innovation. His work has not only revolutionized industries but has also improved the quality of life for many individuals around the globe.

Collaborations: Throughout his career, Saied N Tehrani has collaborated with top research institutions, universities, and companies to bring his inventions to life. His ability to work across disciplines and bring together diverse teams has been instrumental in the success of his projects.

Conclusion: Saied N Tehrani's relentless pursuit of innovation and his passion for creating solutions to complex problems make him a true visionary in the world of inventors. His impact on various industries is profound, and his legacy will continue to inspire future generations of inventors and innovators.

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