The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Dec. 13, 1999
Applicant:
Inventors:
Saied Tehrani, Tempe, AZ (US);
Jing Shi, Salt Lake City, UT (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/115 ;
U.S. Cl.
CPC ...
G11C 1/115 ;
Abstract
A magnetic memory cell (,) has a semiconductor layer (,) positioned between first (,) and second (,) ferromagnetic layers forming either a p-n or Schottky junction. A magnetic layer (,) is positioned between the first ferromagnetic layer and a digit line (first) for pinning a magnetic vector within the second ferromagnetic layer. In a,embodiment, a gate contact (,) is spaced apart from the layer of semiconductor material for controlling the electron flow through the semiconductor layer.