The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2001
Filed:
Mar. 21, 2000
Mark Durlam, Chandler, AZ (US);
Eugene Youjun Chen, Gilbert, AZ (US);
Saied N. Tehrani, Tempe, AZ (US);
Jon Michael Slaughter, Tempe, AZ (US);
Gloria Kerszykowski, Fountain Hills, AZ (US);
Kelly Wayne Kyler, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (,) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (,) including a flux concentrating layer (,). The method includes the steps of depositing a bottom dielectric layer (,), an optional etch stop (,) layer, and a top dielectric layer (,) proximate the magnetic memory bit (,). A trench (,) is etched in the top dielectric layer (,) and the bottom dielectric layer (,). A first barrier layer (,) is deposited in the trench (,). Next, a metal system (,) is deposited on a surface of the first barrier layer (,). The metal system (,) includes a copper (Cu) seed material (,), and a plated copper (Cu) material (,), a first outside barrier layer (,), a flux concentrating layer (,), and a second outside barrier layer (,). The metal system (,) is patterned and etched to define a copper (Cu) damascene bit line (,).