Gloria J Kerszykowski

Title: Gloria J Kerszykowski: Innovator in Magnetoelectronics

Introduction

Gloria J Kerszykowski is a prominent inventor based in Fountain Hills, AZ (US), known for her significant contributions to the field of magnetoelectronics. With a total of nine patents to her name, she has made remarkable advancements in the manufacturing of magnetoelectronic devices.

Latest Patents

One of her latest patents is a method of manufacturing a magnetoelectronic device. This method involves providing an electrically conducting material and an electrically insulating material adjacent to at least a portion of the electrically conducting material. The process includes implanting a magnetic material into the electrically insulating material, which increases its magnetic permeability. The implant can be either a blanket or a targeted implant. Another notable patent is for a magnetoresistive random access memory (MRAM) device integrated with other types of circuitry. This innovation allows MRAM to be embedded with a processing unit, enhancing efficiency by utilizing a metal layer that serves both as part of the interconnect for the other circuit and as part of the MRAM cell. The design simplifies the writing process for MRAM cells by using common program lines.

Career Highlights

Throughout her career, Gloria has worked with leading companies in the technology sector, including Motorola Corporation and Freescale Semiconductor. Her work has significantly impacted the development of advanced electronic devices.

Collaborations

Gloria has collaborated with notable professionals in her field, including Mark A Durlam and Eugene Youjun Chen. These collaborations have further enriched her innovative contributions to magnetoelectronics.

Conclusion

Gloria J Kerszykowski stands out as a pioneering inventor in the realm of magnetoelectronics, with her patents reflecting her expertise and innovative spirit. Her work continues to influence the future of electronic device manufacturing.