The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2006
Filed:
Dec. 08, 2003
Gloria J. Kerszykowski, Fountain Hills, AZ (US);
LI Hsin Chang, Chandler, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Mitchell T. Lien, Gilbert, AZ (US);
Thomas V. Meixner, Gilbert, AZ (US);
Loren J. Wise, Tempe, AZ (US);
Gloria J. Kerszykowski, Fountain Hills, AZ (US);
Li Hsin Chang, Chandler, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Mitchell T. Lien, Gilbert, AZ (US);
Thomas V. Meixner, Gilbert, AZ (US);
Loren J. Wise, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A magnetoresistive random access memory (MRAM) is embedded with another circuit type. Logic, such as a processing unit, is particularly well-suited circuit type for embedding with MRAM. The embedding is made more efficient by using a metal layer that is used as part of the interconnect for the other circuit also as part of the MRAM cell. The MRAM cells are all written by program lines, which are the two lines that cross to define a cell to be written. Thus, the design is simplified because there is commonality of usage of the metal line that is used for one of the program lines for the MRAM and for one of the interconnect lines for the logic.