The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Aug. 28, 2000
Mark Durlam, Chandler, AZ (US);
Mark DeHerrera, Tempe, AZ (US);
Eugene Chen, Gilbert, AZ (US);
Saied Tehrani, Tempe, AZ (US);
Gloria Kerszykowski, Fountain Hills, AZ (US);
Peter K. Naji, Phoenix, AZ (US);
Jon Slaughter, Tempe, AZ (US);
Kelly W. Kyler, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of fabricating an MRAM cell includes providing an isolation transistor on a semiconductor substrate and forming an interconnect stack on the substrate in communication with one terminal of the transistor. A via is formed on the upper end of the stack so as to extend from a position below the digit line to a position above the digit line. The via also extends above the upper surface of a dielectric layer to provide an alignment key. A MTJ memory cell is positioned on the upper surface in contact with the via, and the ends of a free layer of magnetic material are spaced from the ends of a pinned edge of magnetic material by using sidewall spacers and selective etching.