Company Filing History:

6 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2001-2008

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7333360 - Apparatus for pulse testing a MRAM device and method therefore (2008-02-19),

2. 6912107 - Magnetic element with insulating veils and fabricating method thereof (2005-06-28),

3. 6909631 - MRAM and methods for reading the MRAM (2005-06-21),

4. 6890770 - Magnetoresistive random access memory device structures and methods for fabricating the same (2005-05-10),

5. 6835423 - Method of fabricating a magnetic element with insulating veils (2004-12-28),

6. 6784510 - Magnetoresistive random access memory device structures (2004-08-31),

7. 6544801 - Method of fabricating thermally stable MTJ cell and apparatus (2003-04-08),

8. 6430084 - Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer (2002-08-06),

9. 6365419 - High density MRAM cell array (2002-04-02),

10. 6331943 - MTJ MRAM series-parallel architecture (2001-12-18),

11. 6233172 - Magnetic element with dual magnetic states and fabrication method thereof (2001-05-15),

Title: The Innovations of Mark DeHerrera: Pioneering Advances in MRAM Technology

Introduction

Mark DeHerrera, an inventor based in Tempe, AZ, has made significant contributions to the field of memory technology, particularly in magnetoresistive random access memory (MRAM). With a portfolio boasting 11 patents, he has been at the forefront of innovations that enhance the performance and reliability of MRAM devices.

Latest Patents

Among DeHerrera's most recent patents are two groundbreaking inventions related to MRAM technology. The first, titled "Apparatus for Pulse Testing a MRAM Device and Method Therefore," introduces methods and apparatus for efficiently testing MRAM components. This innovation employs a magnetoresistive tunnel junction (MTJ) with multiple terminals, utilizing a source measuring unit for DC biasing and a pulse generator for programming the MTJ. The method enables insitu testing in a manufacturing environment, optimizing the production process.

The second patent, "Magnetic Element with Insulating Veils and Fabricating Method Thereof," presents a novel design and fabrication technique for magnetic elements. This invention includes electrodes with ferromagnetic layers separated by an insulating spacer layer, allowing for facilitated tunneling current. The use of insulating veils, transformed through oxygen plasma ashing, enhances electrical isolation between electrodes, further boosting device efficiency.

Career Highlights

Throughout his career, Mark DeHerrera has worked with industry leaders such as Freescale Semiconductor and Motorola Corporation, where he applied his expertise in semiconductor technology and memory systems. His experience in these organizations has paved the way for his innovative contributions to MRAM development.

Collaborations

DeHerrera has collaborated with notable figures in the industry, including Mark A. Durlam and Saied N. Tehrani. These partnerships have fostered an environment of creativity and knowledge sharing, leading to advancements in MRAM technology that will impact the future of electronics.

Conclusion

Mark DeHerrera's work exemplifies the spirit of innovation and the pursuit of excellence in the field of memory technology. His patents reflect a commitment to improving MRAM systems, driving forward the capabilities of memory devices across various applications. With a strong foundation in research and development, DeHerrera continues to be a vital contributor to the evolution of modern electronics.

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