The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2005
Filed:
Oct. 02, 2003
Mark A. Durlam, Chandler, AZ (US);
Thomas W. Andre, Austin, TX (US);
Mark F. Deherrera, Tempe, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Bradley J. Garni, Austin, TX (US);
Joseph J. Nahas, Austin, TX (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Saied Tehrani, Tempe, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Thomas W. Andre, Austin, TX (US);
Mark F. DeHerrera, Tempe, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Bradley J. Garni, Austin, TX (US);
Joseph J. Nahas, Austin, TX (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Saied Tehrani, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An MRAM is provided that minimizes the limits in MRAM density imposed by utilization of an isolation or select device in each memory cell. In addition, methods are provided for reading an MTJ in a ganged memory cell of the MRAM. The method includes determining an electrical value that is at least partially associated with a resistance of a ganged memory cell of the MRAM. The MTJ in the ganged memory cell is toggled and a second electrical value, which is at least partially associated with the resistance of the ganged memory cell, is determined after toggling the MTJ. Once the electrical value prior to the toggling and after the toggling is determined, the difference between the two electrical values is analyzed to determine the value of the MTJ.