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Joseph J Nahas

This inventor holds 35 USPTO granted patents, primarily in Magnetoresistive Memory. Top assignees: Freescale Semiconductor,inc., Motorola Corporation, Everspin Technologies, Inc.. Active years: 1997-2017.

USPTO Granted Patents = 35

% Patents Active = 51.4

Average Co-Inventor Count = 2.4

ph-index = 14

Forward Citations = 644(Granted Patents)

Location History:

Austin, TX (US) (1997 - 2016)
Notre Dame, IN (US) (2017)

Company Filing History:

15 out of 5,491

Freescale Semiconductor,inc.

Everspin Technologies, Inc.

patents

4. 2 out of 387

University of Notre Dame Du Lac

patents

5. 1 out of 834,411

Other

patents

Years Active: 1997-2017

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Areas of Expertise:

MRAM Architecture

Error Correction

Low-Power Processing

Toggle Memory

Sense Amplifier

Memory Simulation

Write Driver

Current Pulse Compensation

Magnetic Memory

Precharge Circuit

Weak Bit Identification

Voltage Regulator

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9825132 - Systems and methods for filtering and computation using tunneling transistors (2017-11-21),

2. 9362919 - Devices for utilizing symFETs for low-power information processing (2016-06-07),

3. 8184476 - Random access memory architecture including midpoint reference (2012-05-22),

4. 7543211 - Toggle memory burst (2009-06-02),

5. 7370260 - MRAM having error correction code circuitry and method therefor (2008-05-06),

6. 7292484 - Sense amplifier with multiple bits sharing a common reference (2007-11-06),

7. 7280388 - MRAM with a write driver and method therefor (2007-10-09),

8. 7266486 - Magnetoresistive random access memory simulation (2007-09-04),

9. 7206223 - MRAM memory with residual write field reset (2007-04-17),

10. 7154772 - MRAM architecture with electrically isolated read and write circuitry (2006-12-26),

11. 7082389 - Method and apparatus for simulating a magnetoresistive random access memory (MRAM) (2006-07-25),

12. 7012841 - Circuit and method for current pulse compensation (2006-03-14),

13. 6944052 - Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics (2005-09-13),

14. 6909631 - MRAM and methods for reading the MRAM (2005-06-21),

15. 6903964 - MRAM architecture with electrically isolated read and write circuitry (2005-06-07),

Title: The Innovative Journey of Joseph J Nahas

Introduction:

Joseph J Nahas, a talented inventor based in Austin, TX, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents:

Joseph J Nahas holds several patents in various technological domains, including artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and ingenuity in the innovation landscape.

Career Highlights:

With a background in engineering and a passion for problem-solving, Joseph J Nahas has had a successful career marked by the development of cutting-edge solutions that have revolutionized industries and improved people's lives.

Collaborations:

Throughout his career, Joseph J Nahas has collaborated with leading research institutions, universities, and innovative companies to bring his ideas to life and turn them into impactful inventions that have garnered recognition worldwide.

Conclusion:

In conclusion, Joseph J Nahas stands as a beacon of innovation in Austin, TX, and beyond, inspiring the next generation of inventors to push the boundaries of what is possible and create a better future through their groundbreaking ideas.

Profile summary based on public USPTO records.

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