The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2007
Filed:
Dec. 07, 2005
Joseph J. Nahas, Austin, TX (US);
Thomas W. Andre, Austin, TX (US);
Chitra K. Subramanian, Austin, TX (US);
Nicholas David Rizzo, Gilbert, AZ (US);
Joseph J. Nahas, Austin, TX (US);
Thomas W. Andre, Austin, TX (US);
Chitra K. Subramanian, Austin, TX (US);
Nicholas David Rizzo, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A magnetoresistive random access memory (MRAM) () that is susceptible to a residual magnetic field is compensated during a write operation. A first magnetic field () is applied to a memory cell during a first time period, the first magnetic field having a first direction (y) and a first magnitude. A second magnetic field () is applied to the memory cell during a second time period and having a second direction (x) and a second magnitude. A third magnetic field () is applied to the memory cell during a third time period, wherein the third time period overlaps at least a portion of the second time period, the third magnetic field having a third direction (−y) which is approximately opposite to the first direction of the first magnetic field. Currents are selectively applied through conductors in the memory cell to apply the three magnetic fields.