The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2006
Filed:
Nov. 22, 2002
Joseph J. Nahas, Austin, TX (US);
Joseph J. Nahas, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method and apparatus () for simulating a magnetoresistive random access memory (MRAM) () uses non-linear functions to model both non-linear magnetic tunnel junction (MTJ) effects and non-linear state switching effects. The method includes calculating a high threshold (T) and a low threshold (T) based on a function of the hard axis current (I). The easy axis current (I) is compared to the high threshold (T). If the easy axis current is greater than the high threshold, the MTJ resistance (R) is set to represent a stored high value. The easy axis current is compared to the low threshold. If the easy axis current is less than the low threshold, the MTJ resistance (R) is set to represent a stored low value. By using non-linear functions to model the MTJ effects and switching effects, the behavior of an MRAM () can be more accurately simulated.