The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2004
Filed:
Jan. 22, 2003
Eugene Youjun Chen, Gilbert, AZ (US);
Mark Durlam, Chandler, AZ (US);
Saied N. Tehrani, Tempe, AZ (US);
Mark DeHerrera, Tempe, AZ (US);
Gloria Kerszykowski, Fountain Hills, AZ (US);
Kelly Wayne Kyler, Mesa, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element ( ) including a first electrode ( ), a second electrode ( ) and a spacer layer ( ). The first electrode ( ) and the second electrode ( ) include ferromagnetic layers ( & ). A spacer layer ( ) is located between the ferromagnetic layer ( ) of the first electrode ( ) and the ferromagnetic layer ( ) of the second electrode ( ) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers ( & ). The device includes insulative veils ( ) characterized as electrically isolating the first electrode ( ) and the second electrode ( ), the insulative veils ( ) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element ( ) with insulative veils ( ) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.