The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Dec. 23, 2003
Mark Deherrera, Tempe, AZ (US);
Nicholas Rizzo, Gilbert, AZ (US);
Mark DeHerrera, Tempe, AZ (US);
Nicholas Rizzo, Gilbert, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Methods and apparatus are provided for testing a magnetoresistive random access memory (MRAM). A magnetoresistive tunnel junction (MTJ) has a first terminal, a second terminal, and a third terminal. A source measuring unit is coupled to a first terminal of a MTJ to provide DC biasing. A current preamp has an input coupled to a third terminal of the MTJ for receiving current corresponding to a resistance of the MTJ. A pulse generator is AC coupled to the MTJ for programming the MTJ. A method of insitu testing a MTJ in a manufacturing environment uses a probe station coupled to the MTJ. A probe station couples to the MTJ. The MTJ is DC biased for generating a current corresponding to the logic level stored in the MTJ. A pulse for programming the MTJ is AC coupled to the MTJ.