The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2001
Filed:
Jun. 24, 1999
Mark Durlam, Chandler, AZ (US);
Gloria Kerszykowski, Chandler, AZ (US);
Jon Slaughter, Tempe, AZ (US);
Theodore Zhu, Plymouth, MN (US);
Eugene Chen, Gilbert, AZ (US);
Saied N. Tehrani, Tempe, AZ (US);
Kelly W. Kyler, Mesa, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (,) having a gate (,), a drain (,) and a source (,) is integrated on a substrate (,) and coupled to a magnetic memory element (,) on the circuitry through a plug conductor (,) and a conductor line (,). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (,). Digit line (,) and bit line (,) are placed under and on top of magnetic memory element (,), respectively, and enabled to access magnetic memory element (,). These lines are enclosed by a high permeability layer (,) excluding a surface facing magnetic memory element (,), which shields and focuses a magnetic field toward magnetic memory element (,).