The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2000
Filed:
Dec. 21, 1998
Mark Durlam, Chandler, AZ (US);
Gloria Kerszykowski, Chandler, AZ (US);
Jon M Slaughter, Tempe, AZ (US);
Eugene Chen, Gilbert, AZ (US);
Saied N Tehrani, Tempe, AZ (US);
Kelly W Kyler, Mesa, AZ (US);
X Theodore Zhu, Maple Grove, MN (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An improved and novel fabrication method for magnetoresistive random access memory (MRAM) is provided. An MRAM device has memory elements and circuitry for managing the memory elements. The circuitry includes transistor (12a), digit line (29), etc., which are integrated on a substrate (11). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (53, 54). A dielectric layer (40, 41) is deposited on the circuit, and trenches (42, 43) are formed in the dielectric layer. A blanket layer (46), which includes magnetic layers (48, 49) and a non-magnetic layer (50) sandwiched by the magnetic layers, is deposited on dielectric layer (41) and in the trenches. Then, the blanket layer outside the trenches is removed and MRAM elements (53, 54) are formed in the trenches.