The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2005
Filed:
Dec. 27, 2002
Mark A. Durlam, Chandler, AZ (US);
Thomas W. Andre, Austin, TX (US);
Brian R. Butcher, Gilbert, AZ (US);
Mark F. Deherrera, Tempe, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Bradley J. Garni, Austin, TX (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Joseph J. Nahas, Austin, TX (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Saied Tehrani, Tempe, AZ (US);
Clarance J. Tracy, Tempe, AZ (US);
Mark A. Durlam, Chandler, AZ (US);
Thomas W. Andre, Austin, TX (US);
Brian R. Butcher, Gilbert, AZ (US);
Mark F. Deherrera, Tempe, AZ (US);
Bradley N. Engel, Chandler, AZ (US);
Bradley J. Garni, Austin, TX (US);
Gregory W. Grynkewich, Gilbert, AZ (US);
Joseph J. Nahas, Austin, TX (US);
Nicholas D. Rizzo, Gilbert, AZ (US);
Saied Tehrani, Tempe, AZ (US);
Clarance J. Tracy, Tempe, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An MRAM architecture is provided that reduces the number of isolation transistors. The MRAM architecture includes magnetoresistive memory cells that are electrically coupled to form a ganged memory cell. The magnetoresistive memory cells of the ganged memory cell are formed with Magnetic Tunnel Junctions (MTJs) and formed without isolation devices, such as isolation transistors, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells. Preferably, the magnetoresistive memory cells of the ganged memory cell only include MTJs, and a programming line and a bit line are adjacent to each of the magnetoresistive memory cells.