Ryu Hirota

This inventor holds 37 USPTO granted patents and 2 published patent applications, plus 1 CIPO patent and 3 EPO patents, primarily in Gallium Nitride Technology. Top assignees: Sumitomo Electric Industries, Limited, Other. Active years: 1999-2020.

USPTO Granted Patents = 37 (Patent Applications = 2)

% Patents Active = 64.9

CIPO Patents = 1 (Patent Applications = 1)

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 3.6

ph-index = 10

Forward Citations = 569(Granted Patents)

Location History:

Osaka, JP (1999 - 2002)
Hyogo, JP (2003 - 2012)
Itami, JP (2006 - 2020)

Company Filing History:

37 out of 10,613

Sumitomo Electric Industries, Limited

patents

3 out of 834,307

Other

patents

where one patent can have more than one assignee

Years Active: 1999-2020

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Areas of Expertise:

Gallium Nitride

III-Nitride

Semiconductor Devices

Crystal Growth

Substrate Fabrication

III-V Compounds

Single Crystal GaN

Nitride Technology

Semiconductor Circuits

Vapor Phase Growth

Heat Treatment

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10837124 - Gallium nitride substrate (2020-11-17),

2. 10458043 - Gallium nitride substrate (2019-10-29),

3. 10443151 - Gallium nitride substrate (2019-10-15),

4. 10006147 - Gallium nitride substrate (2018-06-26),

5. 8404569 - Fabrication method and fabrication apparatus of group III nitride crystal substance (2013-03-26),

6. 8310030 - III-nitride crystal substrate and III-nitride semiconductor device (2012-11-13),

7. 8304334 - III-V compound crystal and semiconductor electronic circuit element (2012-11-06),

8. 8198177 - [object Object] (2012-06-12),

9. 8134223 - III-V compound crystal and semiconductor electronic circuit element (2012-03-13),

10. 8067300 - [object Object] (2011-11-29),

11. 8038794 - Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device (2011-10-18),

12. 8002892 - Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device (2011-08-23),

13. 7998847 - III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device (2011-08-16),

14. 7905958 - Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device (2011-03-15),

15. 7892513 - Group III nitride crystal and method of its growth (2011-02-22),

Title: The Innovative Journey of Inventor Ryu Hirota

Introduction: Ryu Hirota is a renowned inventor hailing from Itami, Japan, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Ryu Hirota holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Hirota has worked with leading research institutions and universities to develop cutting-edge technologies that have revolutionized industries worldwide.

Collaborations: Throughout his career, Ryu Hirota has collaborated with top companies, such as Toyota and Sony, to bring his inventions to the market, solidifying his reputation as a visionary inventor.

Conclusion: Ryu Hirota's passion for innovation and his dedication to pushing the boundaries of what is possible have cemented his legacy as a pioneering inventor in the global landscape of technology and invention.