The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Nov. 18, 2010
Hitoshi Kasai, Itami, JP;
Takuji Okahisa, Itami, JP;
Shunsuke Fujita, Itami, JP;
Naoki Matsumoto, Itami, JP;
Hideyuki Ijiri, Itami, JP;
Fumitaka Sato, Itami, JP;
Kensaku Motoki, Itami, JP;
Seiji Nakahata, Itami, JP;
Koji Uematsu, Itami, JP;
Ryu Hirota, Itami, JP;
Hitoshi Kasai, Itami, JP;
Takuji Okahisa, Itami, JP;
Shunsuke Fujita, Itami, JP;
Naoki Matsumoto, Itami, JP;
Hideyuki Ijiri, Itami, JP;
Fumitaka Sato, Itami, JP;
Kensaku Motoki, Itami, JP;
Seiji Nakahata, Itami, JP;
Koji Uematsu, Itami, JP;
Ryu Hirota, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-Shi, Osaka, JP;
Abstract
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.