Itami, Japan

Fumitaka Sato

This inventor holds 14 USPTO granted patents and 2 EPO patents, primarily in Nitride Semiconductor Technology. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2009-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumitaka Sato. Retrieved from https://idiyas.com/inventor/fumitaka-sato-8rurgndz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 64.3

 

Average Co-Inventor Count = 4.2

ph-index = 5

Forward Citations = 58(Granted Patents)


Location History:

  • Hyogo, JP (2009 - 2010)
  • Itami, JP (2009 - 2016)

Company Filing History:


Years Active: 2009-2016

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Areas of Expertise:
Composite Substrate
Gallium Nitride
Nitride Semiconductor
Epitaxial Substrate
Crystal Growth
Fabrication Method
Manufacturing Process
Group III Nitride
Conductive Substrate
Crystal Substrate
Nitride Crystal
Semiconductor Substrate
14 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Fumitaka Sato

Introduction

Fumitaka Sato, an accomplished inventor based in Itami, Japan, has made significant strides in the field of semiconductor technology. With an impressive portfolio of 14 patents, Sato's innovative spirit is evident in his cutting-edge work at Sumitomo Electric Industries, Limited.

Latest Patents

Among his notable contributions, Sato has developed a composite substrate and a method for manufacturing the same. His first patent describes an epitaxial-deposition composite substrate, which features a nitride-compound semiconductor first substrate bonded to a second substrate made of either identical or different material. This groundbreaking design emphasizes a strong bond, occupying at least 90% of the surface area where the two substrates meet. The second patent focuses on a detailed method for manufacturing this composite substrate, which includes various critical steps such as ion implantation and precise temperature control to ensure robustness and effectiveness.

Career Highlights

Throughout his career, Sato has demonstrated exceptional technical knowledge and expertise in semiconductor materials. His role at Sumitomo Electric Industries has allowed him to push the boundaries of technology, leading to advancements that benefit the electronic and materials industries. His contributions have not only gained recognition within his company but have also made a significant impact on the field as a whole.

Collaborations

Sato has collaborated with esteemed colleagues, including Seiji Nakahata and Koji Uematsu. Together, they have combined their skills and knowledge to drive forward essential projects, resulting in innovative outcomes that enhance the scope of research and application in semiconductor technology.

Conclusion

Fumitaka Sato's extensive work in refining composite substrates marks him as a key figure in semiconductor innovation. With his numerous patents and dedication to advancing the field, Sato continues to inspire future generations of inventors and researchers aiming to explore the frontiers of technology. His contributions undoubtedly set a high standard within the industry, showcasing the importance of persistent innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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