The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2010
Filed:
Dec. 02, 2008
Akinori Koukitu, Koganei, JP;
Yoshinao Kumagai, Koganei, JP;
Yoshiki Miura, Itami, JP;
Kikurou Takemoto, Itami, JP;
Fumitaka Sato, Itami, JP;
Akinori Koukitu, Koganei, JP;
Yoshinao Kumagai, Koganei, JP;
Yoshiki Miura, Itami, JP;
Kikurou Takemoto, Itami, JP;
Fumitaka Sato, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate (), such as a ()-cut sapphire substrate, is placed on a susceptor of a metalorganic hydrogen chloride vapor phase apparatus (). Next, gaseous iron compound Gfrom a source () for an iron compound, such as ferrocene, and hydrogen chloride gas G1from a hydrogen chloride source () are caused to react with each other in a mixing container () to generate gas Gof an iron-containing reaction product, such as iron chloride (FeCl). In association with the generation, the iron-containing reaction product G, first substance gas Gcontaining elemental nitrogen from a nitrogen source (), and second substance gas Gcontaining elemental gallium are supplied to a reaction tube () to form iron-doped gallium nitride () on the substrate ().