Itami, Japan

Yoshiki Miura

This inventor holds 19 USPTO granted patents and 1 published patent application, plus 1 CIPO patent and 2 EPO patents, primarily in Gallium Nitride Technology. Top assignee: Sumitomo Electric Industries, Limited. Active years: 1993-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiki Miura. Retrieved from https://idiyas.com/inventor/yoshiki-miura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 68.4


 

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 186(Granted Patents)


Location History:

  • Hyogo, JP (1993 - 2000)
  • Itami, JP (1999 - 2013)

Company Filing History:


Years Active: 1993-2013

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Areas of Expertise:
Gallium Nitride
Epitaxial Wafer
Semiconductor Device
Light Emitting Element
Thin Film
Vapor Phase Epitaxy
Group III-V Compounds
Baseplate
Defect Prevention
Substrate Fabrication
Epitaxial Layer
19 patents (USPTO):Explore Patents

Title: **Innovations of Yoshiki Miura in Semiconductor Technology**

Introduction

Yoshiki Miura, a prominent inventor located in Itami, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 19 patents, Miura has focused on methods for producing GaN (Gallium Nitride) substrates and related semiconductor devices. His contributions have paved the way for advancements in efficient manufacturing techniques within the industry.

Latest Patents

Miura's latest patents reflect his expertise in the complexities of semiconductor manufacturing processes. His notable inventions include:

- Method of manufacturing GaN substrate

- Method of manufacturing epitaxial wafer

- Method of manufacturing semiconductor device and epitaxial wafer

These patents utilize intricate equations to determine the optimal thickness of GaN substrates, ensuring durability and efficiency. For instance, the minimum thickness (t) of the GaN substrate is calculated using a specific expression involving parameters such as the radius, warp, and lattice constants of GaN and AlN.

Career Highlights

Yoshiki Miura's career is closely linked with Sumitomo Electric Industries, Limited, where he contributes to cutting-edge research and development. His work focuses on producing GaN-based semiconductor devices that are not only innovative but also cost-effective. Miura’s patented methods enable the joining of thin GaN films to different substrates, positioning him as a leader in semiconductor fabrication technology.

Collaborations

Throughout his career, Miura has collaborated with skilled coworkers such as Akinori Koukitu and Hisashi Seki. Together, they have pushed the boundaries of semiconductor research, resulting in new techniques that enhance the quality and efficacy of GaN substrates and devices.

Conclusion

Yoshiki Miura is a key figure in the semiconductor industry, driven by a commitment to innovation and excellence. His patents and collaborative efforts continue to inspire advancements in manufacturing techniques, establishing him as a vital contributor to the future of semiconductor technology. As the industry evolves, Miura's work will undoubtedly play a crucial role in shaping the next generation of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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