The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Aug. 29, 1996
Yoshiki Miura, Hyogo, JP;
Mitsuru Shimazu, Hyogo, JP;
Kensaku Motoki, Hyogo, JP;
Takuji Okahisa, Hyogo, JP;
Masato Matsushima, Hyogo, JP;
Hisashi Seki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
An epitaxial wafer enabling epitaxial growth at a high temperature includes a compound semiconductor substrate containing As or P, and a covering layer including GaN; or InN; or AlN; or a nitride mixed-crystalline material containing Al, Ga, In and N. The covering layer covers at least a front surface and a back surface of the substrate. A method of preparing such an epitaxial wafer including steps of growing the covering layer at a growth temperature of at least 300.degree. C. and less than 800.degree. C. so as to cover at least the front and back surfaces of the substrate, and then annealing the substrate having the covering thereon layer at a temperature of at least 700.degree. C. and less than 1200.degree. C.