The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2001
Filed:
Jun. 06, 2000
Applicant:
Inventors:
Yoshiki Miura, Itami, JP;
Toshiyuki Morimoto, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 2/518 ;
U.S. Cl.
CPC ...
C30B 2/518 ;
Abstract
In the present method, a group III-V compound semiconductor wafer includes a substrate consisting of a group III-V compound whose outer peripheral edge portion is so chamfered that its section has an arcuate shape substantially with a radius R, and an epitaxial layer consisting of a group III-V compound layer formed on the substrate. A portion of the wafer is removed at the outer peripheral edge thereof, up to a distance L from the original peripheral edge, and the distance L satisfies the expression R≦L≦3L. thereby an abnormally grown part of the epitaxial layer is reliably removed.