The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Mar. 24, 1997
Takuji Okahisa, Itami, JP;
Mitsuru Shimazu, Itami, JP;
Masato Matsushima, Itami, JP;
Yoshiki Miura, Itami, JP;
Kensaku Motoki, Itami, JP;
Hisashi Seki, Hachioji, JP;
Akinori Koukitu, Fucyu, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0<x<1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a reaction chamber and heated at a first temperature. Indium nitride (InN) is grown epitaxially on the substrate by nitrogen (N.sub.2) carrier gas to form an InN buffer layer. Thereafter, a third gas including hydrogen chloride (H1) and gallium (Ga) is introduced with the first and second gases into a chamber heated at a second temperature higher than the first temperature and an epitaxial In.sub.x Ga.sub.1-x N layer is grown on the buffer layer by N.sub.2 gas. By using helium, instead of N.sub.2, as carrier gas, the In.sub.x Ga.sub.1-x N layer with more homogeneous quality is obtained. In addition, the InN buffer layer is allowed to be modified into a GaN buffer layer.