The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2011
Filed:
May. 22, 2008
Katsushi Akita, Itami, JP;
Hitoshi Kasai, Itami, JP;
Yoshiki Miura, Itami, JP;
Kensaku Motoki, Itami, JP;
Katsushi Akita, Itami, JP;
Hitoshi Kasai, Itami, JP;
Yoshiki Miura, Itami, JP;
Kensaku Motoki, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized.