Hitoshi Kasai

This inventor holds 13 USPTO granted patents, plus 1 CIPO patent and 4 EPO patents. Top assignee: Sumitomo Electric Industries, Limited. Active years: 2002-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hitoshi Kasai. Retrieved from https://idiyas.com/inventor/hitoshi-kasai-xla81nlf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 13

% Patents Active = 53.8

CIPO Patents = 1 (Patent Applications = 6)

EPO Patents = 4

Average Co-Inventor Count = 4.3

ph-index = 5

Forward Citations = 422(Granted Patents)

Company Filing History:

13 out of 10,647

Sumitomo Electric Industries, Limited

patents

Years Active: 2002-2015

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9153742 - GaN-crystal free-standing substrate and method for producing the same (2015-10-06),

2. 8574364 - GaN-crystal free-standing substrate and method for producing the same (2013-11-05),

3. 8404569 - Fabrication method and fabrication apparatus of group III nitride crystal substance (2013-03-26),

4. 8143140 - Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same (2012-03-27),

5. 7973322 - Nitride semiconductor light emitting device and method for forming the same (2011-07-05),

6. 7968864 - Group-III nitride light-emitting device (2011-06-28),

7. 7915635 - Semiconductor light-emitting element and substrate used in formation of the same (2011-03-29),

8. 7858502 - Fabrication method and fabrication apparatus of group III nitride crystal substance (2010-12-28),

9. 7825409 - GaN crystal substrate (2010-11-02),

10. 7816238 - GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate (2010-10-19),

11. 7728348 - Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same (2010-06-01),

12. 7589000 - Fabrication method and fabrication apparatus of group III nitride crystal substance (2009-09-15),

13. 6468882 - Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate (2002-10-22),

Title: Hitoshi Kasai: Innovator in GaN Technology

Introduction

Hitoshi Kasai is a prominent inventor based in Itami, Japan, known for his significant contributions to the field of semiconductor technology. He holds a total of 13 patents, showcasing his innovative spirit and technical expertise. His work primarily focuses on the development of GaN (Gallium Nitride) materials, which are crucial for various electronic applications.

Latest Patents

One of Hitoshi Kasai's latest patents is for a GaN-crystal free-standing substrate and the method for producing the same. This invention involves a GaN crystal grown by HVPE (Hydride Vapor Phase Epitaxy) with a (0001) plane serving as a crystal growth plane. The substrate features at least one plane of a {10-11} plane and a {11-22} plane, which constitute a facet crystal region, excluding the side surface of the crystal. The (0001)-plane-growth crystal region has specific concentrations of carbon, silicon, and oxygen, ensuring optimal performance for electronic devices.

Career Highlights

Hitoshi Kasai is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of semiconductor technology. His work has not only advanced the understanding of GaN materials but has also paved the way for their application in high-performance electronic devices.

Collaborations

Hitoshi has collaborated with notable colleagues, including Katsushi Akita and Kensaku Motoki, contributing to a dynamic research environment that fosters innovation and development in semiconductor technology.

Conclusion

Hitoshi Kasai's contributions to GaN technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence the future of electronic materials and devices.

Profile summary based on public USPTO records.