The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2011
Filed:
Apr. 17, 2008
Katsushi Akita, Itami, JP;
Takashi Kyono, Itami, JP;
Keiji Ishibashi, Itami, JP;
Hitoshi Kasai, Itami, JP;
Katsushi Akita, Itami, JP;
Takashi Kyono, Itami, JP;
Keiji Ishibashi, Itami, JP;
Hitoshi Kasai, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
An active layeris provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region, the active layer, and a second conduction type gallium nitride-based semiconductor regionare disposed in a predetermined axis Ax direction. The active layerincludes a well layer composed of hexagonal InGaN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InGaN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.