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For the Inventor, By the Inventor

Itami, Japan

Keiji Ishibashi

This inventor holds 63 USPTO granted patents and 1 published patent application and 12 EPO patents, primarily in Nitride Semiconductor Technology (CPC class H01L). Top assignees: Sumitomo Electric Industries, Limited, A.l.m.t. Corporation. Active years: 2003-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Keiji Ishibashi. Retrieved from https://idiyas.com/inventor/keiji-ishibashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 63 

% Patents Active = 73.0

 

Average Co-Inventor Count = 2.0

ph-index = 7

Forward Citations = 190(Granted Patents)

Forward Citations (Not Self Cited) = 119(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hyogo, JP (2010 - 2018)
  • Itami, JP (2003 - 2021)

Company Filing History:

goldMedal63 out of 10,641 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal1 out of 86 
 
A.l.m.t. Corporation
 patents
where one patent can have more than one assignee

Years Active: 2003-2021

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Areas of Expertise:
Nitride Substrates
Silicon Carbide
Epitaxial Layer
Semiconductor Devices
Crystal Substrates
Manufacturing Methods
Composite Substrates
Surface Treatment
Polishing Agent
Sulfide Layer
Laminated Structures
Group III Nitride
63 patents (USPTO):Explore Patents
1. 11094537 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2021-08-17),
2. 10600676 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2020-03-24),
3. 10186451 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2019-01-22),
4. 10113248 - Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same (2018-10-30),
5. 10078059 - Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same (2018-09-18),
6. 9923063 - Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same (2018-03-20),
7. 9917004 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2018-03-13),
8. 9728612 - Silicon carbide substrate, semiconductor device and methods for manufacturing them (2017-08-08),
9. 9722028 - Silicon carbide substrate, semiconductor device, and methods for manufacturing them (2017-08-01),
10. 9708735 - Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same (2017-07-18),
11. 9570540 - Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same (2017-02-14),
12. 9499925 - Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same (2016-11-22),
13. 9490132 - Substrate, semiconductor device, and method of manufacturing the same (2016-11-08),
14. 9484416 - Silicon carbide substrate, semiconductor device and methods for manufacturing them (2016-11-01),
15. 9437690 - Silicon carbide substrate, semiconductor device, and methods for manufacturing them (2016-09-06),

Title: Keiji Ishibashi: Pioneering Inventor from Itami, Japan

Introduction: Keiji Ishibashi is a renowned inventor hailing from Itami, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Keiji Ishibashi holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Keiji Ishibashi has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Keiji Ishibashi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Keiji Ishibashi's relentless pursuit of innovation and his passion for creating technology that makes a positive impact on society solidify his position as a trailblazing inventor in the global tech landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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