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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094537 B1

PDFFull Text
Date of Patent:
Aug. 17, 2021

Filed:

Feb. 11, 2020

Group iii nitride composite substrate and method for manufacturing the same, and method for manufacturing group iii nitride semiconductor device

Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Keiji Ishibashi, Itami, JP;

Akihiro Hachigo, Itami, JP;

Yuki Hiromura, Itami, JP;

Naoki Matsumoto, Itami, JP;

Seiji Nakahata, Itami, JP;

Fumitake Nakanishi, Itami, JP;

Takuya Yanagisawa, Itami, JP;

Koji Uematsu, Itami, JP;

Yuki Seki, Itami, JP;

Yoshiyuki Yamamoto, Itami, JP;

Yusuke Yoshizumi, Itami, JP;

Hidenori Mikami, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorney:

Faegre Drinker Biddle & Reath LLP

Primary Examiner:

Jeffrey A Vonch

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/683 (2006.01); H01L 21/762 (2006.01); B32B 7/04 (2019.01); H01L 29/20 (2006.01); B32B 7/06 (2019.01); B32B 7/02 (2019.01); H01L 33/02 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02513 (2013.01); B32B 7/04 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0259 (2013.01); H01L 21/02389 (2013.01); H01L 21/02422 (2013.01); H01L 21/02436 (2013.01); H01L 21/76251 (2013.01); B32B 7/02 (2013.01); B32B 7/06 (2013.01); B32B 2307/20 (2013.01); H01L 21/02024 (2013.01); H01L 21/0254 (2013.01); H01L 21/02367 (2013.01); H01L 21/02458 (2013.01); H01L 21/02658 (2013.01); H01L 21/30625 (2013.01); H01L 21/6835 (2013.01); H01L 21/76254 (2013.01); H01L 29/2003 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/3511 (2013.01); Y10T 428/2495 (2015.01); Y10T 428/24298 (2015.01); Y10T 428/24322 (2015.01); Y10T 428/24331 (2015.01); Y10T 428/24975 (2015.01); Y10T 428/26 (2015.01); Y10T 428/265 (2015.01); Y10T 428/31 (2015.01);
Abstract

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

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