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Akihiro Hachigo

USPTO Granted Patents = 48 (Patent Applications = 10)

EPO Patents = 5 (Patent Applications = 11)

Average Co-Inventor Count = 3.5

ph-index = 10

Forward Citations = 282(Granted Patents)

Location History:

Hyogo, JP (1993 - 1996)
Itami, JP (1994 - 2021)

Company Filing History:

45 out of 10,250

Sumitomo Electric Industries, Limited

3 out of 33,442

Seiko Epson Corporation

Years Active: 1993-2021

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Areas of Expertise:

Group III Nitride

Composite Substrate

Semiconductor Device

Gallium Nitride

Epitaxial Layer

Surface Acoustic Wave

Nitride-Based Compound Semiconductor

Diamond Base Material

Piezoelectric Devices

Manufacturing Methods

Damage Evaluation

Thin Film Technology

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11094537 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2021-08-17),

2. 10600676 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2020-03-24),

3. 10186451 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2019-01-22),

4. 9917004 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2018-03-13),

5. 9312340 - Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same (2016-04-12),

6. 9312165 - Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device (2016-04-12),

7. 9252207 - Composite substrate (2016-02-02),

8. 9136337 - Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same (2015-09-15),

9. 8884306 - Semiconductor device and method for manufacturing the same (2014-11-11),

10. 8664085 - Method of manufacturing composite substrate (2014-03-04),

11. 8349078 - Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device (2013-01-08),

12. 8283694 - GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device (2012-10-09),

13. 8183668 - Gallium nitride substrate (2012-05-22),

14. 8177911 - Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane (2012-05-15),

15. 8143140 - Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same (2012-03-27),

Title: The Innovative Journey of Akihiro Hachigo

Introduction: Akihiro Hachigo is a pioneering inventor hailing from Itami, Japan. His relentless passion for innovation has led to groundbreaking advancements in various fields.

Latest Patents: Akihiro Hachigo holds several recent patents in the automotive industry, focusing on eco-friendly technologies and safety features that have revolutionized the sector.

Career Highlights: With a career spanning over two decades, Akihiro Hachigo has worked with leading automotive companies, contributing significantly to the development of electric vehicles and autonomous driving systems.

Collaborations: Throughout his career, Akihiro Hachigo has collaborated with top engineers, researchers, and designers, fostering a culture of creativity and excellence in all his projects.

Conclusion: Akihiro Hachigo's dedication to innovation and his remarkable contributions to the automotive industry make him a true visionary whose work continues to shape the future of technology.

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