Sumitomo Electric Industries, Limited

Seiko Epson Corporation

Akihiro Hachigo

Hideaki Nakahata

Shinichi Shikata

Keiji Ishibashi

Kenjiro Higaki

Seiji Nakahata

Satoshi Fujii

Naoki Matsumoto

Naoji Fujimori

Shin-ichi Shikata

Fumitake Nakanishi

Yusuke Yoshizumi

Takayuki Nishiura

Katsuhiro Itakura

Hidenori Mikami

Yuki Hiromura

Takahiro Imai

Yoshiyuki Yamamoto

Koji Uematsu

Makoto Kiyama

Masato Irikura

Takuya Yanagisawa

Yuki Seki

Katsushi Akita

Yoshiki Miura

Fumitaka Sato

Hitoshi Kasai

Yoko Maeda

Masaki Ueno

Takashi Kyono

Hiromu Shiomi

Yu Saitoh

Natsuo Tatsumi

Kazuhide Sumiyoshi

Kuniaki Ishihara

Masashi Narita

Takahisa Yoshida

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 &#x3a9;/sq or less.

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a-group III-nitride-film-side main surface of the group III nitride composite substrate is 200 &#x3a9;/sq or less. A method for manufacturing a group III nitride composite substrate includes the steps of bonding the group III nitride film and the support substrate to each other; and reducing the thickness of at least one of the group III nitride film and the support substrate bonded to each other. Accordingly, a group III nitride composite substrate of a low sheet resistance that is obtained with a high yield as well as a method for manufacturing the same are provided.

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate having a thickness tof 0.1 mm or more and 1 mm or less and a group III nitride film having a thickness t, thinner than the thickness t, of 0.01 mm or more and 0.25 mm or less that are bonded to each other. An absolute value |&#x394;&#x3b1;| of a difference &#x394;&#x3b1; in thermal expansion coefficient determined by subtracting a thermal expansion coefficient &#x3b1;of the support substrate from a thermal expansion coefficient &#x3b1;of the group III nitride film is 2.2&#xd7;10Kor less. A Young's modulus Eand the thickness tof the support substrate, a Young's modulus Eand the thickness tof the group III nitride film, and the difference &#x394;&#x3b1; in thermal expansion coefficient satisfy a relation: t/t&#x2267;6E&#xb7;|&#x394;&#x3b1;|/E.

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet.

Composite substrate

A group III nitride composite substrate includes a support substrate and a group III nitride film. A ratio s/mof a standard deviation sof the thickness of the group III nitride film, to a mean value mof the thickness thereof is 0.001 or more and 0.2 or less, and a ratio s/mof a standard deviation sof an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation, to a mean value mof the absolute value of the off angle thereof is 0.005 or more and 0.6 or less. Accordingly, there is provided a low-cost and large-diameter group III nitride composite substrate including a group III nitride film having a large thickness, a small thickness variation, and a high crystal quality.

A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1&#xd7;10cm, and oxygen concentration of at most 5&#xd7;10cm. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.

Semiconductor device and method for manufacturing the same

A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied.

Method of manufacturing composite substrate

The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1&#xd7;10cmwith a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.

Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device

A GaN substrate on which an epitaxially grown layer of good quality can be formed is obtained. A GaN substrate as a group III nitride substrate has a surface in which the number of chlorine atoms per square centimeter of the surface is not more than 2&#xd7;10, and the number of silicon atoms per square centimeter of the surface is not more than 3&#xd7;10, wherein a plane orientation of the surface is any of a (0001) plane, a (11-20) plane, a (10-12) plane, a (10-10) plane, a (20-21) plane, a (10-11) plane, a (11-21) plane, a (11-22) plane, and a (11-24) plane of a wurtzite structure.

GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

A gallium nitride substrate comprising a primary surface, the primary surface being tilted at an angle in a range of 20 to 160 degrees with respect to a C-plane of the substrate, and the substrate having a fracture toughness of more than or equal to 1.36 MN/m.

Gallium nitride substrate

A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half width of a peak at a wavelength corresponding to a bandgap of the compound semiconductor member, in an emission spectrum obtained by the measurement of photoluminescence.

Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membrane

There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 &#x3bc;m and at most 100 &#x3bc;m from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 &#x3bc;m. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

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Itami, Japan

Akihiro Hachigo