The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Oct. 27, 2010
Hiromu Shiomi, Osaka, JP;
Yu Saitoh, Itami, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Akihiro Hachigo, Itami, JP;
Makoto Kiyama, Itami, JP;
Seiji Nakahata, Itami, JP;
Hiromu Shiomi, Osaka, JP;
Yu Saitoh, Itami, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Akihiro Hachigo, Itami, JP;
Makoto Kiyama, Itami, JP;
Seiji Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-Shi, Osaka, JP;
Abstract
The present method of forming a nitride semiconductor epitaxial layer includes the steps of growing at least one layer of nitride semiconductor epitaxial layer on a nitride semiconductor substrate having a dislocation density lower than or equal to 1×10cmwith a chemical decomposition layer interposed therebetween, the chemical decomposition layer being chemically decomposed at least with either a gas or an electrolytic solution, and decomposing the chemical decomposition layer at least with either the gas or the electrolytic solution at least either during or after the step of growing the nitride semiconductor epitaxial layer, thereby separating the nitride semiconductor epitaxial layer from the nitride semiconductor substrate. A high-quality nitride semiconductor epitaxial layer suffering less damage when separated from the nitride semiconductor substrate is thereby formed.