The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jan. 19, 2012
Takashi Kyono, Itami, JP;
Kuniaki Ishihara, Itami, JP;
Akihiro Hachigo, Itami, JP;
Takahisa Yoshida, Itami, JP;
Masaki Ueno, Itami, JP;
Makoto Kiyama, Itami, JP;
Takashi Kyono, Itami, JP;
Kuniaki Ishihara, Itami, JP;
Akihiro Hachigo, Itami, JP;
Takahisa Yoshida, Itami, JP;
Masaki Ueno, Itami, JP;
Makoto Kiyama, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×10cm, and oxygen concentration of at most 5×10cm. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.