The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Sep. 30, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventor:

Keiji Ishibashi, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/32 (2006.01); H01L 21/02 (2006.01); C30B 29/36 (2006.01); C30B 31/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/812 (2006.01); H01L 29/04 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); C30B 29/36 (2013.01); C30B 31/04 (2013.01); H01L 21/02002 (2013.01); H01L 21/02008 (2013.01); H01L 21/02019 (2013.01); H01L 21/02024 (2013.01); H01L 21/02378 (2013.01); H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/66068 (2013.01); H01L 29/812 (2013.01);
Abstract

A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×10atoms/cmand not more than 2000×10atoms/cm, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.


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