The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Jul. 10, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventor:

Keiji Ishibashi, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0312 (2006.01); H01L 21/304 (2006.01); C30B 23/02 (2006.01); H01L 29/167 (2006.01); H01L 21/02 (2006.01); H01L 29/34 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); C30B 29/36 (2006.01); C30B 33/00 (2006.01); H01L 21/28 (2006.01); H01L 29/36 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/304 (2013.01); C30B 23/025 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01); H01L 21/0201 (2013.01); H01L 21/02002 (2013.01); H01L 21/02008 (2013.01); H01L 21/0243 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/28 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/34 (2013.01); H01L 29/36 (2013.01); H01L 29/45 (2013.01); H01L 29/4966 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); Y10T 428/21 (2015.01);
Abstract

A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation σ of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation σ of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.


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