The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Aug. 17, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventor:
Keiji Ishibashi, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); B28D 5/04 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); B28D 5/045 (2013.01); H01L 21/046 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/868 (2013.01);
Abstract
A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×10atoms/cmand not more than 2000×10atoms/cm, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.