The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2018

Filed:

Jun. 14, 2017
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Keiji Ishibashi, Hyogo, JP;

Yusuke Yoshizumi, Hyogo, JP;

Shugo Minobe, Hyogo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 21/02 (2006.01); C30B 33/00 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 33/00 (2013.01); C30B 21/02 (2013.01); C30B 29/403 (2013.01); Y10T 428/21 (2015.01); Y10T 428/24355 (2015.01);
Abstract

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7×10, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than −10° and equal to or smaller than 10° in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.


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