The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Sep. 19, 2011
Shinsuke Fujiwara, Itami, JP;
Koji Uematsu, Itami, JP;
Hitoshi Kasai, Itami, JP;
Takuji Okahisa, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Koji Uematsu, Itami, JP;
Hitoshi Kasai, Itami, JP;
Takuji Okahisa, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10atoms/cmor less, a silicon concentration of 5×10atoms/cmor more and 2×10atoms/cmor less, and an oxygen concentration of 1×10atoms/cmor less; and the facet crystal region has a carbon concentration of 3×10atoms/cmor less, a silicon concentration of 5×10atoms/cmor less, and an oxygen concentration of 5×10atoms/cmor more and 5×10atoms/cmor less.