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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8574364 B1

PDFFull Text
Expired
Date of Patent:
Nov. 05, 2013

Filed:

Sep. 19, 2011

Gan-crystal free-standing substrate and method for producing the same

Applicants:

Shinsuke Fujiwara, Itami, JP;

Koji Uematsu, Itami, JP;

Hitoshi Kasai, Itami, JP;

Takuji Okahisa, Itami, JP;

Inventors:

Shinsuke Fujiwara, Itami, JP;

Koji Uematsu, Itami, JP;

Hitoshi Kasai, Itami, JP;

Takuji Okahisa, Itami, JP;

Assignee:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Guinever Gregorio

Int. Cl.
CPC ...
C01B 21/06 (2006.01); C30B 25/00 (2006.01); C30B 23/00 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×10atoms/cmor less, a silicon concentration of 5×10atoms/cmor more and 2×10atoms/cmor less, and an oxygen concentration of 1×10atoms/cmor less; and the facet crystal region has a carbon concentration of 3×10atoms/cmor less, a silicon concentration of 5×10atoms/cmor less, and an oxygen concentration of 5×10atoms/cmor more and 5×10atoms/cmor less.

Find Patent Forward Citations

Fujiwara, Shinsuke. (2013). Gan-crystal free-standing substrate and method for producing the same (U.S. Patent No. 8574364). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8574364

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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