The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jun. 11, 2008
Hideki Osada, Itami, JP;
Hitoshi Kasai, Itami, JP;
Keiji Ishibashi, Itami, JP;
Seiji Nakahata, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Yoshiki Miura, Itami, JP;
Hideki Osada, Itami, JP;
Hitoshi Kasai, Itami, JP;
Keiji Ishibashi, Itami, JP;
Seiji Nakahata, Itami, JP;
Takashi Kyono, Itami, JP;
Katsushi Akita, Itami, JP;
Yoshiki Miura, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.