The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Dec. 19, 1995
Yoshiki Miura, Hyogo, JP;
Keiichiro Fujita, Hyogo, JP;
Kikurou Takemoto, Hyogo, JP;
Masato Matsushima, Hyogo, JP;
Hideki Matsubara, Hyogo, JP;
Shigenori Takagishi, Hyogo, JP;
Hisashi Seki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A high performance epitaxial wafer which is useful, for example in a light emitting device is produced with a buffer layer. The epitaxial wafer has a substrate of a compound semiconductor selected from a group consisting of GaAs, GaP, InAs and InP. The buffer layer of GaN is grown on the substrate to a thickness within the range of 10 nm to 80 nm. An epitaxial layer of GaN is formed on the buffer layer. The buffer layer is grown at a first temperature by organic metal chloride vapor phase epitaxy, while the epitaxial layer is grown at a second temperature, which is higher than the first temperature, by the organic metal chloride vapor phase epitaxy.