The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
May. 30, 2008
Naoki Matsumoto, Itami, JP;
Fumitaka Sato, Itami, JP;
Seiji Nakahata, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Naoki Matsumoto, Itami, JP;
Fumitaka Sato, Itami, JP;
Seiji Nakahata, Itami, JP;
Takuji Okahisa, Itami, JP;
Koji Uematsu, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile