The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Jan. 26, 2009
Shinsuke Fujiwara, Itami, JP;
Hiroaki Yoshida, Itami, JP;
Ryu Hirota, Itami, JP;
Koji Uematsu, Itami, JP;
Haruko Tanaka, Itami, JP;
Shinsuke Fujiwara, Itami, JP;
Hiroaki Yoshida, Itami, JP;
Ryu Hirota, Itami, JP;
Koji Uematsu, Itami, JP;
Haruko Tanaka, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×10cmor less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.