The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jan. 24, 2005
Ryu Hirota, Itami, JP;
Seiji Nakahata, Itami, JP;
Masaki Ueno, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal () onto a base substrate (); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal () onto the first Group-III nitride crystal (). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×10dislocations/cm.