The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2011
Filed:
Mar. 30, 2005
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minoh, JP;
Seiji Nakahata, Itami, JP;
Ryu Hirota, Itami, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minoh, JP;
Seiji Nakahata, Itami, JP;
Ryu Hirota, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Other;
Abstract
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.