The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2019

Filed:

Apr. 10, 2015
Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Makoto Kiyama, Itami, JP;

Ryu Hirota, Itami, JP;

Seiji Nakahata, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C30B 29/40 (2006.01); C30B 25/02 (2006.01); C30B 29/64 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 25/02 (2013.01); C30B 29/64 (2013.01);
Abstract

A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cmand not more than 2 cmbetween maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an Ephonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cmbetween maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the Ephonon mode at all of measurement points in the five locations.


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