The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Apr. 15, 2005
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minoh, JP;
Seiji Nakahata, Itami, JP;
Ryu Hirota, Itami, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Katano, JP;
Masashi Yoshimura, Takarazuka, JP;
Fumio Kawamura, Minoh, JP;
Seiji Nakahata, Itami, JP;
Ryu Hirota, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Other;
Abstract
A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.