The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2012
Filed:
Jul. 07, 2011
Ryu Hirota, Itami, JP;
Koji Uematsu, Itami, JP;
Tomohiro Kawase, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally. The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate () containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (), and inversion domains () in which the polarity in the <0001> directions is inverted with respect to the matrix (); and a step of growing a III-nitride crystal () onto the matrix () and inversion domains (it) of the undersubstrate () by a liquid-phase technique; and is characterized in that a first region (), being where the growth rate of III-nitride crystal () growing onto the matrix () is greater, covers second regions (), being where the growth rate of III-nitride crystal () growing onto the inversion domains () is lesser.